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MarketScreener Homepage  >  Equities  >  Tokyo  >  Fujimi Inc    5384   JP3820900003

FUJIMI INC

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Japan - Patent Application Titled “Polishing Composition, Method For Producing Polishing Composition, And Polishing Method” Published Online (USPTO 20190225836): Fujimi Incorporated

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08/14/2019 | 05:03pm EDT

2019 AUG 14 (NewsRx) -- By a News Reporter-Staff News Editor at Daily Asia Business -- According to news reporting originating from Washington, D.C., by NewsRx journalists, a patent application by the inventors SUZUKI, Shota (Kiyosu-shi, Aichi, Japan); IZAWA, Yoshihiro (Kiyosu-shi, Aichi, Japan), filed on June 12, 2017, was made available online on July 25, 2019.

The assignee for this patent application is Fujimi Incorporated (Kiyosu-shi, Aichi, Japan).

Reporters obtained the following quote from the background information supplied by the inventors: “In recent years, a so-called chemical mechanical polishing (CMP) technique for polishing and flattening a semiconductor substrate in producing a device is used in accordance with multilayer wiring on a surface of a semiconductor substrate. CMP is a method for flattening a surface of an object to be polished (polishing object) such as a semiconductor substrate by using a polishing composition (slurry) containing abrasive grains such as silica, alumina, or ceria, an anti-corrosion agent, a surfactant, or the like. The object to be polished (polishing object) is silicon, polysilicon, silicon oxide film (silicon oxide), silicon nitride, a wiring or a plug which consists of metal, or the like.

“As a CMP slurry for polishing a substrate containing an oxygen atom and a silicon atom such as silicon oxide, for example, JP 2001-507739 A (corresponding to U.S. Pat. No. 5,759,917 A) discloses an aqueous chemical machine polishing composition containing a salt, a soluble cerium, carboxylic acid, and silica (particularly fumed silica). Further, J P 2015-063687 A (corresponding to U.S. Pat. No. 9,012,327 A) discloses a chemical machine polishing composition containing water, 0.1 to 40% by weight of colloidal silica particles, and 0.001 to 5% by weight of an additive (pyridine derivative).”

In addition to obtaining background information on this patent application, NewsRx editors also obtained the inventors’ summary information for this patent application: “However, there is a problem in that, although the aqueous chemical machine polishing composition described in JP 2001-507739 A (corresponding to U.S. Pat. No. 5,759,917 A) improves a polishing speed of a substrate, many scratches are generated on a surface of the substrate.

“Further, there is a problem in that, although the chemical machine polishing composition described in JP 2015-063687 A (corresponding to U.S. Pat. No. 9,012,327 A) suppresses scratches on a surface of a substrate, a polishing speed is not sufficient.

“As described above, regarding polishing an object to be polished containing an oxygen atom and a silicon atom, a polishing composition that can solve problems of improving the polishing speed and reducing the scratches (defects) that are contradictory with each other, has been desired.

“In this regard, the present invention has been made in view of the above-described circumstances, and an object thereof is to provide a polishing composition which can polish an object to be polished (particularly, an object to be polished containing an oxygen atom and a silicon atom) at a high polishing speed and can reduce scratches (defects) on a surface of the object to be polished.

“The inventors have conducted intensive studies to solve the above-described problems. As a result, the inventors have found that the above-described problems are solved by a polishing composition which uses silica having a predetermined height of a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25.degree. C. or higher and 250.degree. C. or lower, and has a pH of less than 6.0.

“That is, the above-described object can be achieved by a polishing composition containing silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25.degree. C. or higher and 250.degree. C. or lower is -0.011 or more and less than 0, a pH at 25.degree. C. of the polishing composition being less than 6.0.”

The claims supplied by the inventors are:

“1. A polishing composition comprising silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25.degree. C. or higher and 250.degree. C. or lower is -0.011 or more and less than 0, a pH at 25.degree. C. of the polishing composition being less than 6.0.

“2. The polishing composition according to claim 1, wherein the silica is colloidal silica.

“3. The polishing composition according to claim 1, further comprising water.

“4. The polishing composition according to claim 3, further comprising an acid.

“5. The polishing composition according to claim 1, wherein a content of the silica is more than 0% by mass and 8% by mass or less with respect to the whole composition.

“6. The polishing composition according to claim 1, wherein a true density of the silica is 1.80 g/cm3 or more.

“7. The polishing composition according to claim 1, wherein the polishing composition is used for polishing an object to be polished containing an oxygen atom and a silicon atom.

“8. A method for producing a polishing composition to be used for polishing an object to be polished, the method comprising: preparing silica of which a maximum peak height in a weight change rate distribution curve obtained by thermogravimetric measurement in a range of 25.degree. C. or higher and 250.degree. C. or lower is -0.011 or more and less than 0; and mixing the silica with water.

“9. A polishing method comprising: polishing an object to be polished containing an oxygen atom and a silicon atom by using the polishing composition according to claim 1.

“10. A polishing method comprising: obtaining a polishing composition by the production method according to claim 8; and polishing the object to be polished by using the polishing composition.”

For more information, see this patent application: SUZUKI, Shota; IZAWA, Yoshihiro. Polishing Composition, Method For Producing Polishing Composition, And Polishing Method. Filed June 12, 2017 and posted July 25, 2019. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220190225836%22.PGNR.&OS=DN/20190225836&RS=DN/20190225836

(Our reports deliver fact-based news of research and discoveries from around the world.)

Copyright © 2019 NewsRx LLC, Daily Asia Business, source Geographic Newsletters

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