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Patent Issued for Semiconductor Image Sensors Having Channel Stop Regions And Methods Of Fabricating The Same (USPTO 10,367,024): Samsung Electronics Co. Ltd.

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08/14/2019 | 05:56pm EDT

2019 AUG 14 (NewsRx) -- By a News Reporter-Staff News Editor at South Korea Daily Report -- According to news reporting originating from Alexandria, Virginia, by NewsRx journalists, a patent by the inventors Nah, Seungjoo (Buk-gu, South Korea); Ahn, Jung-Chak (Yongin-si, South Korea); Lee, Kyung-Ho (Suwon-si, South Korea), filed on June 15, 2017, was published online on August 12, 2019.

The assignee for this patent, patent number 10,367,024, is Samsung Electronics Co. Ltd. (Suwon-si, Gyeonggi-do, South Korea).

Reporters obtained the following quote from the background information supplied by the inventors: “The inventive concepts relate to a semiconductor device and a method of fabricating the same.

“Transistors are widely used in semiconductor devices. For example, millions of transistors may exist on a single integrated circuit (IC). One common type of transistor is the metal oxide semiconductor field effect transistor (MOSFET). MOSFET transistors include p-type channel transistors and n-type channel transistors. A complementary MOS (CMOS) device include both a p-type channel transistor and an n-type channel transistor in a complementary configuration.

“One type of semiconductor device that can be fabricated using the CMOS process is a CMOS image sensor (CIS). One problem of the CIS is that a source follower transistor of each pixel has a large amount of random telegraph signal (RTS) noise which can reduce the sensitivity of the CIS. RTS noise may be caused by charge trap/de-trap in a shallow trench isolation (STI) edge that contacts a channel of the source follower transistor. Generally, RTS noise can be reduced by including an enlarged source follower transistor in a CIS. However, including such a large device may undesirable or not possible in some designs.”

In addition to obtaining background information on this patent, NewsRx editors also obtained the inventors’ summary information for this patent: “Aspects of the inventive concepts provide a semiconductor device in which random telegraph signal (RTS) noise can be reduced by minimizing a shallow trench isolation (STI) edge in a transistor.

“Aspects of the inventive concepts also provide a method of fabricating a semiconductor device in which RTS noise can be reduced by minimizing an STI edge in a transistor.

“However, aspects of the inventive concepts are not restricted to the above. The above and other aspects of the inventive concepts will become more apparent to one of ordinary skill in the art by referencing the detailed description below.

“According to an aspect of the inventive concepts there is provided a semiconductor device including a light-receiving element which outputs electric charges in response to incident light, and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current that is proportional to the incident light. The drive transistor includes a first gate electrode, a first channel region under the first gate electrode, first and second source-drain regions which are disposed at respective ends of the first channel region, the first and second source-drain regions having a first conductivity type, and a first channel stop region on a first side of the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type.

“According to another aspect of the inventive concepts there is provided a semiconductor device including a first channel region in a substrate that has a first segment that extends in a first direction and a second segment that extends in a second direction to intersect the first direction, a second channel region which is electrically connected to the first channel region, the second channel region including a segment that extends in a third direction that intersects the second direction, a first gate electrode on the first channel region, a second gate electrode on the second channel region, the second gate electrode separated from the first gate electrode, a first source-drain region at first end of the first channel region, a second source-drain at a second end of the second channel region and a third source-drain region between the first channel region and the second channel region, the first, second and third source-drain regions having a first conductivity type, and a first channel stop region on a side of a bent portion of the first channel region that has a second conductivity type that is different from the first conductivity type.

“According to another aspect of the inventive concepts there is provided a semiconductor device that includes a substrate having a channel region having a first conductivity type formed therein; a first source-drain region at a first end of the channel region; a second source-drain region at a second end of the channel region that is opposite the first end of the channel region; and a first channel stop region in the substrate on a first side of the channel region that has a second conductivity type that is opposite the first conductivity type.

“According to another aspect of the inventive concepts there is provided a method of fabricating a semiconductor device, the method including forming a first channel region, which is bent from a first direction to a second direction that intersects the first direction, and a second channel region which is connected to the first channel region and bent from the second direction to a third direction that intersects the second direction, in a substrate, forming source-drain regions by doping both ends of each of the first and second channel regions with a first dopant, forming a first channel stop region by doping a region on a side of the first channel region with a second dopant of a conductivity type opposite to a conductivity type of the first dopant, forming a gate insulating layer on the first or second channel region, and forming gate electrodes on the gate insulating layer.”

The claims supplied by the inventors are:

“What is claimed is:

“1. A semiconductor device comprising: a light-receiving element which outputs electric charges in response to incident light; and a drive transistor which is gated by an output of the light-receiving element to generate a source-drain current that is proportional to the incident light, wherein the drive transistor comprises: a first gate electrode; a first channel region under the first gate electrode; first and second source-drain regions which are disposed at respective ends of the first channel region, the first and second source-drain regions having a first conductivity type; a first channel step region on a first side of the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type; and a second channel stop region is on a second side of the first channel region that is opposite the first side of the first channel region, wherein the first channel region includes a first segment under the first gate electrode that extends in a first direction and a second segment under the first gate electrode that extends in a second direction that intersects the first direction, and wherein a first end of the first segment directly connects to the first source-drain region, a second end of the first segment directly connects to a first end of the second segment and a second end of the second segment directly connects to the second source-drain region.

“2. The semiconductor device of claim 1, wherein the first and second source-drain regions each include a first dopant, and the first channel stop region includes a second dopant, wherein concentrations of the first dopants in the first and second source-drain regions exceed a concentration of the second dopant in the first channel stop region.

“3. The semiconductor device of claim 2, wherein the first channel stop region is between the first channel region and the light receiving element.

“4. The semiconductor device of claim 1, wherein the first channel region is on a first side of the first channel stop region, and a shallow trench isolation (STI) region is on a second side of the first channel stop region that is opposite the first side of the first channel stop region.

“5. The semiconductor device of claim 1, wherein a shallow trench isolation (STI) region is on a second side of the first channel region that is opposite the first side of the first channel region.

“6. The semiconductor device of claim 5, wherein the drive transistor is formed in a substrate, and wherein a first depth of the first channel stop region into the substrate is smaller than a second depth of the STI region into the substrate.

“7. A semiconductor device comprising: a light-receiving element which outputs electric charges in response to incident light; and a drive transistor Which is gated by an output of the light-receiving element to generate a source-drain current that is proportional, to the incident light, wherein the drive transistor comprises: a first gate electrode; a first channel region under the first gate electrode; first and second source-drain regions which are disposed at respective ends of the first channel region, the first and second source-drain regions having a first conductivity type; a first channel stop region on a first side of the first channel region, the first channel stop region having a second conductivity type that is different from the first conductivity type; a second channel stop region on a second side of the first channel region that is opposite the first side of the first channel region; and a select transistor which is, gated by a select line to provide an output of the drive transistor to a column line, wherein the select transistor comprises: a second gate electrode; a second channel region under the second gate electrode; a third source-drain region which is at a first end of the second channel region and that has the first conductivity type; and a third channel stop region on a first side of the second channel region, the third channel stop region having the second conductivity type, wherein the second source-drain region is at a second end of the second channel region that is opposite the first end of the second channel region, and wherein the third source-drain region is on a first side of the second gate electrode and a fourth source-drain region is on a second side of the second gate electrode that is adjacent the first side.

“8. The semiconductor device of claim 7, further comprising a shallow trench isolation (STI) or deep trench isolation (DTI) region on a second other side of the second channel region that is opposite the first side of the second channel region.”

For more information, see this patent: Nah, Seungjoo; Ahn, Jung-Chak; Lee, Kyung-Ho. Semiconductor Image Sensors Having Channel Stop Regions And Methods Of Fabricating The Same. U.S. Patent Number 10,367,024, filed June 15, 2017, and published online on August 12, 2019. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=10,367,024.PN.&OS=PN/10,367,024RS=PN/10,367,024

(Our reports deliver fact-based news of research and discoveries from around the world.)

Copyright © 2019 NewsRx LLC, South Korea Daily Report, source Geographic Newsletters

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