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MarketScreener Homepage  >  Equities  >  KOREA EXCHANGE  >  Samsung Electronics Co Ltd    005930   KR7005930003

SAMSUNG ELECTRONICS CO LTD

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South Korea - Researchers Submit Patent Application, “Semiconductor Laser Device And Method Of Manufacturing The Same”, for Approval (USPTO 20190229492): Samsung Electronics Co. Ltd.

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08/14/2019 | 05:41pm EDT

2019 AUG 14 (NewsRx) -- By a News Reporter-Staff News Editor at Daily Asia Business -- From Washington, D.C., NewsRx journalists report that a patent application by the inventors CHA, Jung-Ho (Yongin-si, South Korea); KIM, Seong-Gu (Pyeongtaek-si, South Korea); SHIN, Dong-Jae (Seoul, South Korea); SHIN, Yong-Hwack (Hwaseong-si, South Korea); HA, Kyoung-Ho (Seoul, South Korea), filed on October 5, 2018, was made available online on July 25, 2019.

The patent’s assignee is Samsung Electronics Co. Ltd. (Suwon-si, South Korea).

News editors obtained the following quote from the background information supplied by the inventors: “Example embodiments relate to a semiconductor laser device and a method of manufacturing the same.

“When a laser diode (LD) device is formed on a silicon-on-insulator (SOI) substrate, heat generated from the LD device may not be discharged into a substrate due to a silicon oxide layer, and thus the LD device may be deteriorated.”

As a supplement to the background information on this patent application, NewsRx correspondents also obtained the inventors’ summary information for this patent application: “Example embodiments provide a semiconductor laser device having improved characteristics.

“Example embodiments provide a method of manufacturing a semiconductor laser device having improved characteristics.

“According to certain example embodiments, the disclosure is directed to a semiconductor laser device, comprising: a first cladding on a substrate, the first cladding including gallium nitride (GaN); a light waveguide on the first cladding; a semiconductor laser source structure on the light waveguide, the semiconductor laser source structure comprising a first contact pattern, a first separate confinement heterostructure (SCH) pattern, a first active pattern, a second SCH pattern, a second cladding, and a second contact pattern sequentially stacked on the light waveguide; and first and second electrodes on the first and second contact patterns, respectively.

“According to certain example embodiments, the disclosure is directed to a semiconductor laser device, comprising: a first cladding on a substrate, the first cladding including gallium nitride (GaN); first and second light waveguides on the first cladding, the first and second light waveguides including silicon (Si) and titanium oxide (TiO.sub.2), respectively; first and second semiconductor laser source structures on the first and second light waveguides, respectively; first and second electrodes connected to the first semiconductor laser source structure; and third and fourth electrodes connected to the second semiconductor laser source structure.

“According to certain example embodiments, the disclosure is directed to a method of manufacturing a semiconductor laser device, the method comprising: forming a first cladding on a substrate, the first cladding including gallium nitride (GaN); forming a light waveguide on the first cladding; forming a semiconductor laser source structure on the light waveguide, the semiconductor laser source structure comprising a first contact pattern, a first separate confinement heterostructure (SCH) pattern, an active pattern, a second SCH pattern, a second cladding, and a second contact pattern sequentially stacked on the light waveguide; and forming first and second electrodes on the first and second contact patterns, respectively.”

The claims supplied by the inventors are:

“1. A semiconductor laser device, comprising: a first cladding on a substrate, the first cladding including gallium nitride (GaN); a light waveguide on the first cladding; a semiconductor laser source structure on the light waveguide, the semiconductor laser source structure comprising a first contact pattern, a first separate confinement heterostructure (SCH) pattern, a first active pattern, a second SCH pattern, a second cladding, and a second contact pattern sequentially stacked on the light waveguide; and first and second electrodes on the first and second contact patterns, respectively.

“2. The semiconductor laser device of claim 1, wherein the light waveguide includes silicon.

“3. The semiconductor laser device of claim 1, wherein the light waveguide includes titanium oxide (TiO.sub.2).

“4. The semiconductor laser device of claim 1, wherein the light waveguide has a bar shape extending in a direction, and wherein the semiconductor laser device further includes a third cladding on the first cladding, the third cladding covering each of opposite sidewalls of the light waveguide.

“5. The semiconductor laser device of claim 4, wherein the third cladding includes silicon oxide (SiO.sub.2), silicon nitride (SiN), or air.

“6. The semiconductor laser device of claim 1, wherein the first cladding is doped with carbon (C) or iron (Fe).

“7. The semiconductor laser device of claim 1, further comprising a second active pattern in the first cladding.

“8. The semiconductor laser device of claim 7, wherein the second active pattern includes indium gallium nitride (InGaN), indium gallium aluminum nitride (InGaAlN), or aluminum nitride (AlN).

“9. The semiconductor laser device of claim 1, wherein each of the first SCH pattern, the first active pattern, and the second SCH pattern includes indium gallium aluminum arsenide (InGaAlAs), and wherein the first and second SCH patterns are doped with n-type impurities and p-type impurities, respectively.

“10. The semiconductor laser device of claim 1, wherein the first contact pattern includes indium phosphide (InP) doped with n-type impurities, the second cladding includes indium phosphide (InP) doped with p-type impurities, and the second contact pattern includes indium gallium arsenide (InGaAs) doped with p-type impurities.

“11. The semiconductor laser device of claim 1, wherein portions of the first active pattern, the second SCH pattern, and the second cladding are doped with protons, so that paths of current flowing between the first and second electrodes are restricted, and wherein the portions are not overlapping the light waveguide in a vertical direction.

“12. A semiconductor laser device, comprising: a first cladding on a substrate, the first cladding including gallium nitride (GaN); first and second light waveguides on the first cladding, the first and second light waveguides including silicon (Si) and titanium oxide (TiO.sub.2), respectively; first and second semiconductor laser source structures on the first and second light waveguides, respectively; first and second electrodes connected to the first semiconductor laser source structure; and third and fourth electrodes connected to the second semiconductor laser source structure.

“13. The semiconductor laser device of claim 12, wherein the first semiconductor laser source structure includes a first contact pattern, a first separate confinement heterostructure (SCH) pattern, a first active pattern, a second SCH pattern, a second cladding and a second contact pattern sequentially stacked, and wherein the second semiconductor laser source structure includes a third contact pattern, a third SCH pattern, a second active pattern, a fourth SCH pattern, a third cladding and a fourth contact pattern sequentially stacked.

“14. The semiconductor laser device of claim 13, further comprising a third active pattern in the first cladding, the third active pattern including indium gallium nitride (InGaN), indium gallium aluminum nitride (InGaAlN), or aluminum nitride (AlN).

“15. The semiconductor laser device of claim 14, wherein each of the first and second light waveguides has a bar shape extending in a direction, and wherein the semiconductor laser device further includes: a fourth cladding on the first cladding, the fourth cladding covering each of opposite sidewalls of the first light waveguide; and a fifth cladding on the first cladding, the fifth cladding covering each of opposite sidewalls of the second light waveguide.

“16. The semiconductor laser device of claim 15, wherein each of the fourth and fifth claddings includes silicon oxide (SiO.sub.2), silicon nitride (SiN), or air.

“17. The semiconductor laser device of claim 12, wherein the first cladding is doped with carbon (C) or iron (Fe).

“18. A method of manufacturing a semiconductor laser device, the method comprising: forming a first cladding on a substrate, the first cladding including gallium nitride (GaN); forming a light waveguide on the first cladding; forming a semiconductor laser source structure on the light waveguide, the semiconductor laser source structure comprising a first contact pattern, a first separate confinement heterostructure (SCH) pattern, an active pattern, a second SCH pattern, a second cladding, and a second contact pattern sequentially stacked on the light waveguide; and forming first and second electrodes on the first and second contact patterns, respectively.

“19. The method of claim 18, wherein forming the light waveguide includes: bonding a second substrate on the first cladding, the second substrate including silicon; reducing a thickness of the second substrate; removing a portion of the second substrate to form an opening exposing an upper surface of the first cladding; and forming a third cladding to fill the opening.

“20. The method of claim 19, wherein forming the first contact pattern, the first SCH pattern, the active pattern, the second SCH pattern, the second cladding and the second contact pattern sequentially stacked on the light waveguide includes: sequentially forming a second contact layer, a second cladding layer, a second SCH layer, an active layer, a first SCH layer, and a first contact layer on a third substrate; bonding the third substrate with the second substrate so that the first contact layer contacts an upper surface of the light waveguide; removing the third substrate to expose the second contact layer; and etching the second contact layer, the second cladding layer, the second SCH layer, the active layer, the first SCH layer and the first contact layer.”

For additional information on this patent application, see: CHA, Jung-Ho; KIM, Seong-Gu; SHIN, Dong-Jae; SHIN, Yong-Hwack; HA, Kyoung-Ho. Semiconductor Laser Device And Method Of Manufacturing The Same. Filed October 5, 2018 and posted July 25, 2019. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220190229492%22.PGNR.&OS=DN/20190229492&RS=DN/20190229492

(Our reports deliver fact-based news of research and discoveries from around the world.)

Copyright © 2019 NewsRx LLC, Daily Asia Business, source Geographic Newsletters

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