Toshiba Electronic Devices & Storage Corporation ('Toshiba') has launched eight 650 V new generation[1] super junction N-ch power MOSFET products in the DTMOSVI series: 'TK110N65Z', 'TK110Z65Z', 'TK110A65Z', 'TK125V65Z', 'TK155A65Z', 'TK170V65Z', 'TK190A65Z' and 'TK210V65Z' for switching power supplies of industrial equipment such as data centers and power conditioners of photovoltaic generators to expand the lineup in terms of packages and On-resistance.

The new generation DTMOSVI series has reduced the values of 'drain-source On-resistance x gate-drain charge'-a figure of merit-by about 40 % compared with the previous generation DTMOSIV-H series, allowing the efficiency of switching power supplies to be improved by about 0.36 %[2].

Toshiba will continue expanding its product lineup to meet market trends and help improve the efficiency of power supplies.

Notes:

[1] As of March 2020, from a survey by Toshiba

[2] As of March 2020, values measured by Toshiba (When TK040N65Z in the new series is compared with TK62N60X in the conventional series by using a PFC circuit with an output power of 2500 W)

Features

The values of 'drain-source On-resistance x gate-drain charge' have been reduced by about 40 %[3] to improve the efficiency of switching power supplies.

Notes:

[3] Comparison with the conventional generation DTMOSIV-H series

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