Shipments start today.
The new product is the first in Toshiba's new U-MOS X-H Series of MOSFET with a trench structure, and is fabricated with the company's latest[1] generation process. Mounted on a low-resistance TO-220SM(W) package, it delivers industry-leading low On-resistance[2], with a maximum On-resistance of 1.92mO, an approximate 20% reduction against the current 'TK160F10N1L.' This advance helps to reduce equipment power consumption. It also delivers reduced switching noise, due to optimization of capacitance characteristics, which helps to reduce EMI[3] of equipment. In addition, the threshold voltage width is tightened to 1V to enhance switching synchronization when used in parallel.
Applications
Automotive equipment (Load switches, switching power supplies and motor drives, etc.)
Features
U-MOS X-H Series MOSFET with a trench structure
Industry-leading low On-resistance
RDS(ON)=1.92mO (max) @VGS=10V
AEC-Q101 qualified
Main Specifications
(@Ta=25-degreeC)
Part
Number
Polarity
Absolute maximum ratings
Drain-source
On-resistance
RDS(ON) max
(mO)
Channel-
to-case thermal impedance
Zth(ch-c)
max
(?/W)
Package
Series
Drain-
source
voltage
VDSS
(V)
Drain current
(DC)
ID
(A)
Drain
current
(pulsed)
IDP
(A)
Channel temperature
Tch
(?)
@VGS
=6V
@VGS
=10V
XK1R9F10QB
N-channel
100
160
480
175
3.31
1.92
0.4
TO-220SM(W)
U-MOS X-H
Notes:
[1] As of
[2] Comparison with products with the same VDSS maximum rating and package class; According to a Toshiba survey, as of
[3] EMI (Electro Magnetic Interference)
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