Log in
E-mail
Password
Remember
Forgot password ?
Become a member for free
Sign up
Sign up
Settings
Settings
Dynamic quotes 
OFFON

MarketScreener Homepage  >  Equities  >  Tokyo  >  TOYO TANSO CO., LTD.    5310   JP3616000000

TOYO TANSO CO., LTD. (5310)
My previous session
Most popular
  Report  
SummaryChartsNewsAnalysisCalendarCompanyFinancialsRevisions 
News SummaryMost relevantAll newsOfficial PublicationsSector newsTweets
OFFRE

TOYO TANSO : Patent Issued for SiC Substrate Treatment Method (USPTO 10014176)

share with twitter share with LinkedIn share with facebook
share via e-mail
0
07/12/2018 | 11:46pm CEST

By a News Reporter-Staff News Editor at Electronics Newsweekly -- A patent by the inventors Yabuki, Norihito (Kanonji, JP); Torimi, Satoshi (Kanonji, JP); Nogami, Satoru (Kanonji, JP), filed on November 17, 2015, was published online on July 3, 2018, according to news reporting originating from Alexandria, Virginia, by VerticalNews correspondents.

Patent number 10014176 is assigned to Toyo Tanso Co. Ltd. (Osaka-shi, JP).

The following quote was obtained by the news editors from the background information supplied by the inventors: "SiC, which is superior to Si or the like in, for example, heat resistance and electrical characteristics, has attracted attention as a new semiconductor material.

"A semiconductor device made of SiC is manufactured by using a SiC substrate with a diameter of 4-inch or 6-inch, for example. A method for isolating the semiconductor element by using grooves preformed on the SiC substrate in which ion implantation, ion activation and electrode formation, and the like are performed thereon has been conventionally known as a method for manufacturing the plurality of semiconductor elements from one SiC substrate.

"The SiC substrate may have grooves for the purpose of embedding of a MOSFET gate, in addition to the purpose of isolation of the semiconductor element (see a trench gate MOSFET, NON-Patent Document 1).

"Here, the SiC substrate needs to be heat-treated for activating ions after implanting ions such as Al, or the like. The heat treatment (ion activation treatment) needs to be performed at a high temperature of 1500.degree. C. or more. However, when ion implantation treatment and ion activation treatment are performed on the SiC substrate, the surface of the SiC substrate is roughened.

"Therefore, a carbon cap method in which a surface roughness of the SiC substrate is prevented by forming a carbon cap on the SiC substrate is used. In the carbon cap method, a resist is applied on the surface of the SiC substrate and then the SiC substrate is rotated around a perpendicular line of the surface as a rotation shaft, which can make the resist uniform (spin coating process). Then, the carbon cap is formed by carbonizing the resist. Formation of the carbon cap can suppress the surface roughening of the SiC substrate which is occurred during ion activation treatment. After ion activation treatment, the treatment for removing the carbon cap is needed.

"PRIOR-ART DOCUMENTS

"Non-Patent Documents

"NON-PATENT DOCUMENT 1: '1700V/3.5 m.OMEGA.cm.sup.2 V-groove trench MOSFETs with high threshold voltage', SiC and relevant semiconductor study group 22th conference proceedings, The Japan Society of Applied Physics, Dec. 9, 2013, p. 21-22"

In addition to the background information obtained for this patent, VerticalNews journalists also obtained the inventors' summary information for this patent: "Problems to be Solved by the Invention

"However, in a SiC substrate having grooves, a resist is not uniformly applied even in using a spin coating process because of the grooves as an obstacle. Therefore, in the substrate having the grooves, the surface of the SiC substrate is roughened by ion implantation and ion activation treatment even in using the carbon cap method. This may lead to a case that an appropriate semiconductor element cannot be manufactured. In the carbon cap method, since processes for forming and removing the carbon cap are needed, a step of manufacturing the semiconductor element is complicated.

"The present invention has been made in view of the circumstances described above, and a primary object of this invention is to provide a SiC substrate treatment method for, with respect to a SiC substrate having grooves formed thereon, activating ions while preventing occurrence of a surface roughness.

"Means for Solving the Problems and Effects Thereof

"Problems to be solved by the present invention are as described above, and next, means for solving the problems and effects thereof will be described.

"In an aspect of the present invention, provided is a SiC substrate treatment method for, with respect to a SiC substrate that has, on its surface, an ion implantation region in which ions are implanted and has grooves provided in a region including at least the ion implantation region, performing an ion activation treatment in which the SiC substrate is heated under Si vapor pressure thereby activating ions that are implanted in the SiC substrate while etching the surface of the SiC substrate.

"Accordingly, when the SiC substrate is heated under Si vapor pressure, unlike when using the spin coating process, the grooves are less likely to obstruct (since there is gas, such heat treatment acts uniformly even if the grooves are existing). Therefore, the ions can be activated while preventing a surface roughening (rather while planarizing) even in the SiC substrate having the grooves. Thus, a high-quality semiconductor element can be manufactured with the SiC substrate having the grooves. In the ion activation treatment of the present invention, unlike the spin coating process, a manufacturing step can be simplified since a step of forming and removing a carbon cap is unnecessary. Furthermore, the surface of the SiC substrate can be etched by performing the ion activation treatment of the present invention, which can also remove a region where implanted ions are insufficient, with the same treatment.

"In the SiC substrate treatment method, it is preferable that the grooves formed on the SiC substrate are grooves for isolating the SiC substrate.

"Accordingly, the plurality of high-quality semiconductor elements can be manufactured with the SiC substrate having the grooves.

"In the SiC substrate treatment method, an ion implantation treatment for implanting ions in a SiC substrate that has, on its surface, an epitaxial layer of a single crystal SiC and has the grooves provided at least on the epitaxial layer, is preferably performed prior to the ion activation treatment.

"Accordingly, since an ion distribution can be assumed depending on conditions of ion implantation, the surface of the SiC substrate can be removed only for necessary and sufficient amount.

"In the SiC substrate treatment method, it is preferable that the ion activation treatment is performed under Si and inert gas atmosphere at the pressure of 10 Pa or more and 100 kPa or less.

"Accordingly, since the rate of etching can be suppressed by increasing the pressure with inert gas, the amount of etching on the surface of the SiC substrate can be accurately controlled.

"In the SiC substrate treatment method, it is preferable that the ion activation treatment is performed at 10.sup.-7 Pa or more and 10.sup.-2 Pa or less.

"Accordingly, since the rate of etching can be increased by performing the ion activation treatment under high-vacuum, a treatment time can be reduced when the implanted ions are located at a deep position of the SiC substrate, for example.

"It is preferable that the ion activation treatment is performed under Si and inert gas atmosphere, at the pressure of 10.sup.-2 Pa or more and 10 Pa or less.

"Accordingly, since the rate of etching can be adjusted by adjusting an inert gas pressure, the amount of etching on the surface of the SiC substrate can be controlled to an appropriate amount.

"The SiC substrate treatment method is preferably configured as follows. That is, the ion activation treatment is performed in a state where the SiC substrate is positioned at an internal space of a heat treatment container. The heat treatment container includes a tantalum metal, and has a tantalum carbide layer provided on the internal space side of the tantalum metal, and a tantalum silicide layer provided on the side further toward the internal space than the tantalum carbide layer.

"Accordingly, since the pressure of Si within a storing container can be uniform, the etching on the surface of the SiC substrate can be uniformly performed."

URL and more information on this patent, see: Yabuki, Norihito; Torimi, Satoshi; Nogami, Satoru. SiC Substrate Treatment Method. U.S. Patent Number 10014176, filed November 17, 2015, and published online on July 3, 2018. Patent URL: http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PALL&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.htm&r=1&f=G&l=50&s1=10014176.PN.&OS=PN/10014176RS=PN/10014176

Keywords for this news article include: Asia, Japan, Business, Tantalum, Electronics, Heavy Metals, Semiconductor, Toyo Tanso Co. Ltd., Transition Elements.

Our reports deliver fact-based news of research and discoveries from around the world. Copyright 2018, NewsRx LLC

(c) 2018 NewsRx LLC, source Technology Newsletters

share with twitter share with LinkedIn share with facebook
share via e-mail
0
Latest news on TOYO TANSO CO., LTD.
07/19TOYO TANSO : Expansion of graphite sheet factory and holding completion ceremony
PU
07/18TOYO TANSO : Announcement concerning reinforcement of production facilities for ..
PU
07/17TOYO TANSO : Update of "Corporate Philosophy (CEO's message)"
PU
07/12TOYO TANSO : Patent Issued for SiC Substrate Treatment Method (USPTO 10014176)
AQ
03/22TOYO TANSO : "METHOD FOR MANUFACTURING THIN SiC WAFER AND THIN SiC WAFER" in Pat..
AQ
03/08TOYO TANSO : Patent Issued for Carbon Material for Bearings and Sliding Member M..
AQ
2017TOYO TANSO CO., LTD. : Ex-dividend day for final dividend
FA
2017TOYO TANSO : at M-Tech Osaka (Mechanical Conponents & Materials Technology Expo)
PU
2017TOYO TANSO : USA awarded "FOREIGN DIRECT INVESTMENT"
PU
2017TOYO TANSO : at Thermotec 2017
PU
More news
Financials (JPY)
Sales 2018 41 750 M
EBIT 2018 -
Net income 2018 4 700 M
Debt 2018 -
Yield 2018 1,23%
P/E ratio 2018 14,44
P/E ratio 2019 14,14
Capi. / Sales 2018 1,63x
Capi. / Sales 2019 1,62x
Capitalization 67 935 M
Chart TOYO TANSO CO., LTD.
Duration : Period :
TOYO TANSO CO., LTD. Technical Analysis Chart | MarketScreener
Full-screen chart
Technical analysis trends TOYO TANSO CO., LTD.
Short TermMid-TermLong Term
TrendsBullishBearishNeutral
Income Statement Evolution
Consensus
Sell
Buy
Mean consensus BUY
Number of Analysts 1
Average target price -
Spread / Average Target -100%
EPS Revisions
Managers
NameTitle
Naotaka Kondo Chairman & President
Shigeki Masuda Manager-Finance & Accounting
Guo Bin Zhan Director & Executive Officer
Syogo Yamada Independent Outside Director
Seijin Ishihata Director & Executive Officer
Sector and Competitors
1st jan.Capitalization (M$)
TOYO TANSO CO., LTD.-11.94%605
MURATA MANUFACTURING CO., LTD.15.10%36 013
TE CONNECTIVITY-3.14%32 079
IPG PHOTONICS CORPORATION-25.02%8 632
YAGEO CORPORATION--.--%6 605
FANGDA CARBON NEW MATERIAL CO., LTD.-25.55%5 615