Semiconductor devices used to control electric power are known as power devices, which are used in various fields such as power transmission, train, automotive, solar power, home appliances and other sectors. From an energy-saving perspective, demand is growing for high-performance, high-efficiency devices operating with low loss of power. Silicon carbide (SiC) power devices are among the most notable semiconductor devices, and are being used in an increasingly wide range of applications. Meanwhile, stable supply chain for SiC power product has not been established yet, and expectations are higher for manufacturers who can provide substrates and epitaxial wafers with improved quality.
Against this background,
Since fiscal 2017,
As a manufacturer capable of delivering substrates, epitaxial wafers and devices through an integrated production system,
*1 An abbreviation for Multi-Parameter and Zone controlled SiC growth technology. This crystal growth technology enables the setting of the optimal conditions multi-dimensionally (e.g. spatially and temporally) through precise simulations, optimal conditions multi-dimensionally (e.g. in spatially and thermally)
*2 The substrate was X-ray photographed for observation. If it has no concentrated displacement area, it has a uniform (gray) appearance.
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