Log in
E-mail
Password
Remember
Forgot password ?
Become a member for free
Sign up
Sign up
New member
Sign up for FREE
New customer
Discover our services
Settings
Settings
Dynamic quotes 
OFFON

MarketScreener Homepage  >  News  >  Companies  >  All News

News : Companies
Latest NewsCompaniesMarketsEconomy & ForexCommoditiesInterest RatesBusiness LeadersFinance ProfessionalsCalendarSectors

Toshiba Memory America Introduces Next-Gen Serial Interface NAND

share with twitter share with LinkedIn share with facebook
share via e-mail
0
09/26/2019 | 09:05am EST

New NAND Flash Memory Products for Embedded Applications Support High-Speed Data Transfers, Offer Performance and Density Improvements

Toshiba Memory America, Inc. (TMA), the U.S.-based subsidiary of Toshiba Memory Corporation, today announced the launch of a new family of SLC NAND flash memory products for embedded applications. Compatible with the widely used Serial Peripheral Interface (SPI), Toshiba Memory’s second-generation Serial Interface NAND can be used in a wide range of consumer and industrial applications that require high-speed data transfers, including flat screen TVs, printers, wearable devices, and robots.

This press release features multimedia. View the full release here: https://www.businesswire.com/news/home/20190926005235/en/

Toshiba Memory’s second-generation Serial Interface NAND can be used in a wide range of consumer and industrial applications that require high-speed data transfers, including flat screen TVs, printers, wearable devices, and robots. (Graphic: Business Wire)

Toshiba Memory’s second-generation Serial Interface NAND can be used in a wide range of consumer and industrial applications that require high-speed data transfers, including flat screen TVs, printers, wearable devices, and robots. (Graphic: Business Wire)

The new products bring improved speed (from 104MHz to 133MHz) over Toshiba Memory’s previous generation and include a new command for loading data for programming in 4-bit (QSPI) mode. The addition of an 8-gigabit (Gb) device also brings improved NAND density to the new generation of products. The second-generation Serial Interface NAND family consists of eight products and features power supply voltages of 2.70 to 3.60V and 1.70 to 1.95V. Samples are available now and mass production is scheduled to begin in October.

NOR flash memory has commonly been used in embedded applications for consumer and industrial devices. However, in order to support the new, enhanced features found in embedded devices, larger memory densities are needed. This is especially true in IoT and communications applications, where device miniaturization means that fast, large-capacity flash memory is required – in the smallest package possible. Additionally, microcontroller manufacturers are moving away from the high-pin-count parallel address/data bus in favor of lower-pin-count interfaces, making an alternative to NOR even more important.

"SLC NAND was the very first NAND flash that was developed – and it is still widely used today,” noted Brian Kumagai, director of business development Toshiba Memory America, Inc. “At Toshiba Memory, not only do we remain committed to supporting SLC – we continue to innovate to enable new classes of applications. With our new second-generation Serial Interface NAND, we’re providing an excellent NOR flash alternative, giving users a higher density, more cost-effective solution.”

Product Lineup

Part Number

Density

I/O

Voltage

Package

Mass Production

TC58CVG0S3HRAIJ

1Gb

 

x1, x2, x4

 

 

3.3V

8pin

WSON1

(6mm x 8mm)

Oct. 2019

TC58CYG0S3HRAIJ

1.8V

Oct. 2019

TC58CVG1S3HRAIJ

2Gb

 

3.3V

Oct. 2019

TC58CYG1S3HRAIJ

1.8V

Oct. 2019

TC58CVG2S0HRAIJ

4Gb

 

3.3V

Oct. 2019

TC58CYG2S0HRAIJ

1.8V

Oct. 2019

TH58CVG3S0HRAIJ

8Gb

3.3V

Dec. 2019

TH58CYG3S0HRAIJ

1.8V

Dec. 2019

 

Key Features

Density

1Gb, 2Gb, 4Gb, 8Gb

Page Sizes

2KByte (1Gb, 2Gb), 4KByte (4Gb, 8Gb)

Interface

Serial Peripheral Interface Mode 0, Mode 3

Power Supply Voltage

2.70 to 3.60V, 1.70 to 1.95V

Operating Temperature Range

-40 oC to 85 oC

Features

・133MHz operating frequency

・Program / Read x4 mode

・High-speed sequential read function

・ECC Function (ON/OFF, bit flip count report)

・Data protection function (able to protect specific blocks)

・Parameter Page Function (able to output detailed information on the device)

 

For more information, please visit business.toshiba-memory.com.

Notes:

[1] WSON: Very-Very thin Small Outline No Lead Package

All company names, product names and service names may be trademarks of their respective companies.

In every mention of a Toshiba Memory product: Product density is identified based on the density of memory chip(s) within the Product, not the amount of memory capacity available for data storage by the end user. Consumer-usable capacity will be less due to overhead data areas, formatting, bad blocks, and other constraints, and may also vary based on the host device and application. For details, please refer to applicable product specifications. The definition of 1Gb = 2^30 bits = 1,073,741,824 bits. The definition of 1GB = 2^30 bytes = 1,073,741,824 bytes.

About Toshiba Memory America, Inc.

Toshiba Memory America, Inc. is the U.S.-based subsidiary of Toshiba Memory Corporation, a leading worldwide supplier of flash memory and solid state drives (SSDs). From the invention of flash memory to today’s breakthrough 96-layer BiCS FLASH™ technology, Toshiba Memory continues to lead innovation and move the industry forward. For more information, please visit business.toshiba-memory.com and follow us on social media. Toshiba Memory will officially change its name to Kioxia on October 1, 2019.

© 2019 Toshiba Memory America, Inc. All rights reserved. Information in this press release, including product pricing and specifications, content of services, and contact information is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba Memory product specifications.


© Business Wire 2019
share with twitter share with LinkedIn share with facebook
share via e-mail
0
Latest news "Companies"
04:21pFUJIFILM : HP says open to exploring bid for Xerox
RE
04:01pKARUNA THERAPEUTICS : Schedules Webcast and Conference Call to Announce Results from its Phase 2 Clinical Trial of KarXT for the Treatment of Psychosis in Patients with Schizophrenia
BU
03:31pSEVERAL STATES IMPLEMENTING MODEL LAWS, PRACTICES TO BOLSTER CYBERSECURITY OF ELECTRIC GRID : Vermont Law School Study
PR
03:25pBoeing, Airbus kept in suspense over big Dubai jet deals
RE
03:23pSPARK NEW ZEALAND : keeps Huawei on list of preferred suppliers
RE
03:05pEsperion Announces Pooled Analyses from Phase 3 LDL-C Lowering Clinical Development Program of Bempedoic Acid Presented at the American Heart Association 2019 Scientific Sessions
GL
02:42pHP : rejects takeover offer from Xerox
AQ
02:31pLyka Raises $500,000 in Pre-seed Funding to Disrupt the Australian Dog Food Industry
BU
02:20pRENAULT TO HAVE CEO SHORTLIST SOON BUT NOT IN RUSH : Sueddeutsche Zeitung
RE
02:15pTHE MOST WONDERFUL TIME OF THE YEAR : Netflix and Disney Battle Hallmark for Christmas Viewers
DJ
Latest news "Companies"