Fig. 1 Enhanced effect of heat dissipation performance realized by fabricating a transistor on a diamond substrate. (Better heat dissipation performance than that observed on a Si substrate produces a smaller temperature rise with the same power consumed.) (Data courtesy of Osaka Metropolitan University.)

This study has succeeded in forming surface-activated bonding between a diamond substrate and a gallium nitride layer by using a thin layer of silicon carbide (3C-SiC). The study has also succeeded in fabricating transistors with excellent heat dissipation performance by using the bonded substrate described above. Heat treatment at approx. 800℃ was performed during the manufacture of transistors; however, the bonding interface formed by 3C-SiC was so robust that the bonding interface did not suffer from exfoliation during the heat treatment. The transistors manufactured this time use diamond, the material that has the highest thermal conductivity on Earth and hence can dissipate heat the most effectively. It has been made clear that the use of diamond results in enhanced heat dissipation performance in comparison with transistors on silicon (Fig. 1) and that the quality of the gallium nitride layer does not degrade in this structure.

Since this study enabled fabrication of transistors after bonding processes, it is expected that commercialization of large diameter gallium nitride on diamond substrates will advance. Furthermore, it is also expected that this progress will enable gallium nitride-on-diamond technologies to pave the way for high-power applications such as radar and inverters*3. The results of this study were published online in Applied Physics Express, an international academic journal, on Tuesday, March 8, 2022.

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AIR WATER Inc. published this content on 22 April 2022 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 25 April 2022 07:48:03 UTC.