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MarketScreener Homepage  >  Equities  >  Xetra  >  AIXTRON SE    AIXA   DE000A0WMPJ6

AIXTRON SE

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AIXTRON SE: Decisive progress in multi-junction solar cells / Record efficiency of highly efficient III-V multi-junction solar cells on silicon / High energy efficiency at attractive cost

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09/15/2020 | 07:10am EDT


DGAP-Media / 15.09.2020 / 12:07

Decisive progress in multi-junction solar cells

Record efficiency of highly efficient III-V multi-junction solar cells on silicon / High energy efficiency at attractive cost

Herzogenrath, Germany, September 15, 2020 - A central stage in the development of economic solutions for the industrial use of multi-junction solar cells for power generation has been reached. For the first time, an efficiency of 25.9 percent has been achieved with a multi-junction solar cell grown directly on a silicon substrate.

This record figure was achieved by researchers at the Fraunhofer Institute for Solar Energy Systems ISE in close cooperation with the Technical University of Ilmenau, the Philipps University of Marburg and the epitaxy experts at AIXTRON SE, a leading provider of deposition equipment for the semiconductor industry, as part of the funded "MehrSi" project. The team, together with scientists from the Fraunhofer ISE, succeeded in optimizing the layer structure and technology.

Key technology tandem photovoltaics

"For the first time we have now been able to realize a tandem solar cell based on a silicon wafer with such high efficiency," comments Dietmar Schmitz, Vice President Corporate Technology Transfer at AIXTRON SE. Until now, the production of III-V multi-junction solar cells has been based on a more expensive substrate material, for example also a compound semiconductor material.

Dietmar Schmitz emphasizes what is special about this basic research: "The gallium and phosphorus atoms must occupy the correct lattice positions at the interface with silicon. To achieve this, we have to control the atomic structure very well. This requires exceptionally high precision. In addition, to achieve the necessary high quality of the epi-wafers, it is crucial that a high crystal quality of all layers is achieved during epitaxial growth. This was achieved in the project thanks to the improved system technology developed by AIXTRON and the good cooperation with the project partners".

Low price - High cost attractiveness of silicon wafers

In this so-called tandem photovoltaics, different combinations of high-performance solar cell materials are arranged in layers on top of each other in order to use the different wavelengths of sunlight more efficiently when converting light into electrical energy. Silicon is suitable for absorbing the infrared portion of the sunlight spectrum. Layers of different III-V semiconductor compounds, a few micrometers thick, are then applied to the silicon base to convert the ultraviolet, visible and near-infrared light more efficiently into electricity. Tandem photovoltaics is a key technology for the energy transition. Due to the silicon used, the multi-junction solar cells grown on a silicon substrate are more cost-effective than solar cells based on other substrates.

Work on faster crystal growth to further reduce manufacturing costs

From the technological basis that has now been achieved, the alliance partners are working at high pressure to further increase efficiency and reduce manufacturing costs. To this end, the deposition of the layers is to be realized even faster, with higher throughput and thus more cost-optimized. In addition, the efficiency of the solar cells is to be further improved.

"Specifically, the dislocation density in the III-V solar cell layers is to be reduced from 108 cm-2 to the range of 1-5*106 cm-2 in order to increase the efficiencies to more than 30 percent. And last but not least, the cost-effectiveness of the epitaxy processes is to be further optimized," explains Prof. Dr. Michael Heuken, Vice President Corporate Research and Development at AIXTRON SE.

By means of more cost-effective processes in combination with silicon as the lowest sub-cell, tandem technology is to be made accessible for broad-based photovoltaics in the future. AIXTRON has already been working on such III-V multi-junction solar cells on silicon with several partners for many years.

The project "SiTaSol" for the joint development of layer packages that can be produced as quickly and cheaply as possible is funded by the EU. In "SiTaSol" AIXTRON has built and tested a specially optimized Metal Organic Chemical Vapor Phase Epitaxy (MOVPE) system in its own laboratory.

Further information about tandem photovoltaics at www.ise.fraunhofer.de/en.html

To download a photo (Several III-V tandem solar cells on a silicon substrate with 10 cm diameter (c) Fraunhofer ISE /Photo: Markus Feifel) please click here.

The project "SiTaSol" is funded by the EU (funding number: 727497) and the project "MehrSi" by the Federal Ministry of Education and Research BMBF (funding number: 03SF0525D).

 

Contact person

Guido Pickert
Head of Investor Relations & Corporate Communications
PHONE +49 (2407) 9030-444
MOBILE +49 (173) 5407062
MAIL g.pickert@aixtron.com

 

About AIXTRON
AIXTRON SE is a leading provider of deposition equipment to the semiconductor industry. The Company was founded in 1983 and is headquartered in Herzogenrath (near Aachen), Germany, with subsidiaries and sales offices in Asia, United States and in Europe. AIXTRON's technology solutions are used by a diverse range of customers worldwide to build advanced components for electronic and opto-electronic applications based on compound, silicon, or organic semiconductor materials. Such components are used in a broad range of innovative applications, technologies and industries. These include LED applications, display technologies, data storage, data transmission, energy management and conversion, communication, signaling and lighting as well as a range of other leading-edge technologies.

Our registered trademarks: AIXACT(R), AIXTRON(R), Atomic Level SolutionS(R), Close Coupled Showerhead(R), CRIUS(R), Gas Foil Rotation(R), OVPD(R), Planetary Reactor(R), PVPD(R), TriJet(R)

For further information on AIXTRON (FSE: AIXA, ISIN DE000A0WMPJ6; OTC: AIXNY) please visit our website at: www.aixtron.com/en.

 

Forward-Looking Statements
This document may contain forward-looking statements regarding the business, results of operations, financial condition and earnings outlook of AIXTRON. These statements may be identified by words such as "may", "will", "expect", "anticipate", "contemplate", "intend", "plan", "believe", "continue" and "estimate" and variations of such words or similar expressions. These forward-looking statements are based on our current assessments, expectations and assumptions, of which many are beyond control of AIXTRON, and are subject to risks and uncertainties. You should not place undue reliance on these forward-looking statements. Should these risks or uncertainties materialize, or should underlying expectations not occur or assumptions prove incorrect, actual results, performance or achievements of AIXTRON may materially vary from those described explicitly or implicitly in the relevant forward-looking statement. This could result from a variety of factors, such as actual customer orders received by AIXTRON, the level of demand for deposition technology in the market, the timing of final acceptance of products by customers, the condition of financial markets and access to financing for AIXTRON, general conditions in the market for deposition plants and macroeconomic conditions, cancellations, rescheduling or delays in product shipments, production capacity constraints, extended sales and qualification cycles, difficulties in the production process, the general development in the semi-conductor industry, increased competition, fluctuations in exchange rates, availability of public funding, fluctuations and/or changes in interest rates, delays in developing and marketing new products, a deterioration of the general economic situation and any other factors discussed in any reports or other announcements , in particular in the chapter Risks in the Annual Report, filed by AIXTRON. Any forward-looking statements contained in this document are based on current expectations and projections of the executive board based on information available the date hereof. AIXTRON undertakes no obligation to revise or update any forward-looking statements as a result of new information, future events or otherwise, unless expressly required to do so by law.

This document is an English language translation of a document in German language. In case of discrepancies, the German language document shall prevail and shall be the valid version.



End of Media Release


Issuer: AIXTRON SE
Key word(s): Energy

15.09.2020 Dissemination of a Press Release, transmitted by DGAP - a service of EQS Group AG.
The issuer is solely responsible for the content of this announcement.

The DGAP Distribution Services include Regulatory Announcements, Financial/Corporate News and Press Releases.
Archive at www.dgap.de


Language: English
Company: AIXTRON SE
Dornkaulstraße 2
52134 Herzogenrath
Germany
Phone: +49 (2407) 9030-0
Fax: +49 (2407) 9030-445
E-mail: invest@aixtron.com
Internet: www.aixtron.com
ISIN: DE000A0WMPJ6
WKN: A0WMPJ
Indices: MDAX, TecDAX
Listed: Regulated Market in Frankfurt (Prime Standard); Regulated Unofficial Market in Berlin, Dusseldorf, Hamburg, Hanover, Munich, Stuttgart, Tradegate Exchange; Nasdaq OTC
EQS News ID: 1131687

 
End of News DGAP Media

1131687  15.09.2020 

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© EQS 2020

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