AIXTRON SE announced that AIXTRON Ltd, a subsidiary of AIXTRON SE, will deliver a deposition system from their Close Coupled Showerhead® Metal-Organic Chemical Vapor Deposition (CCS® MOCVD) product range for compound semiconductor materials to the Boise State University. The CCS® 3x2 is an essential part of an infrastructure expansion awarded to Boise State University. The AIXTRON CCS 3x2 being delivered to Boise has a capacity of 3x2” wafers.

The system will have a maximum operating temperature of 1400 C which will enable the deposition of graphene and hBN on sapphire as well as novel structures for GaN-based UV LED's. Equipped with a wide variety of metal-organic and gas channels the system will enable Boise State University to deposit the most advanced 2D materials. In addition, the system includes AIXTRON's proprietary ARGUS and EPISON in-situ metrology technologies which are proven key enablers for the uniform, repeatable wafer scale growth of 2D materials. With help of the CCS 3x2 Boise State aims to enable up-to-date manufacturing of advanced flexible hybrid electronics using 2D-3D heterostructures.

The goal is to use the AIXTRON system to research and overcome the challenges of large-scale synthesis and integration of 2D materials into full semiconductor device process flows. The AIXTRON CCS 3x2 tool is expected to be the only system at a U.S. university dedicated and configured for wafer scale 2D and Nitride-based compound semiconductor growth. It will prepare the future semiconductor workforce at the undergraduate and graduate levels for the U.S. based semiconductor industry.

In close cooperation with AIXTRON, the Boise State research team will leverage unique material properties, artificial intelligence algorithms and trailblazing microfabrication techniques for the creation of novel technologies that will drive future applications.