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GT ADVANCED TECHNOLOGIES INC.

(GTAT)
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GT Advanced Technologies and ON Semiconductor Sign Agreement for Production and Supply of Silicon Carbide Material

03/17/2020 | 09:06am EDT

GT Advanced Technologies (GTAT) and ON Semiconductor announced the execution of a five-year agreement, valued at a potential of $50 million. With this agreement, GTAT will produce and supply its CrystX™ silicon carbide (SiC) material to ON Semiconductor, a global leader in driving energy efficient innovations, for use in high-growth markets and applications. High-growth applications such as electric vehicle (EV) traction systems, hybrid and plug-in EV’s, solar and energy storage, and EV charging all require and depend on a robust supply of high-quality and cost-competitive SiC material. ON Semiconductor will use GTAT’s proprietary 150mm SiC crystal to make its SiC wafers, to further accelerate its role as a vertically integrated supplier within the SiC supply chain and to maintain its world-class supply. The agreement will promote the availability of SiC to help engineers solve their most unique design challenges.


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Managers and Directors
Gregory C. Knight President, Chief Executive Officer & Director
Michele P. Rayos Chief Financial Officer & Vice President
Eugene Irwin Davis Chairman
P. S. Raghavan Chief Technology Officer
Joe Loiselle Vice President-Global Operations
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