Infineon Technologies : presents new automotive 750 V EDT2 IGBTs in a TO247PLUS package for discrete traction inverters
March 03, 2022 at 04:00 am EST
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Infineon presents new automotive 750 V EDT2 IGBTs in a TO247PLUS package for discrete traction inverters
Mar 3, 2022| Market News
Munich, Germany - 3 March, 2022 - Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) is launching the new EDT2 IGBTs in a TO247PLUS package. The devices are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices can significantly increase the performance and reliability of inverter systems. With the automotive micro-pattern trench-field-stop cell design, the IGBTs are based on a technology that has already been successfully utilized in several inverter modules such as the EasyPACK™ 2B EDT2 or the HybridPACK™.
As required for the target applications, the product family is short-circuit-robust. In addition, the TO247PLUS package offers a greater creepage distance for easy design-in. EDT2 technology is optimized for traction inverter and has a breakdown voltage of 750 V, supporting battery voltages up to 470 V DC, and significantly lower switching and conduction losses.
The rated currents of the discrete EDT2 IGBTs are 120 A and 200 A at 100°C, each with a very low forward voltage, reducing conduction losses by up to 13 percent compared to the previous generation. With a rated current of 200 A, the AIKQ200N75CP2 is also the best-in-class discrete IGBT in a TO247Plus package. Thus, for a defined target power class, fewer devices are needed in parallel. Additionally, power density increases and system costs decrease.
In addition, the EDT2 IGBTs feature an extremely narrow parameter distribution. The collector-emitter saturation voltage (V ce(sat)) difference between typical and maximum values is less than 200 mV and the gate threshold voltage (V GEth) difference is less than 750 mV. Furthermore, the thermal coefficient is positive. Together, this enables easy parallel operation and provides system flexibility and power scalability for final designs. Moreover, the IGBTs offer smooth switching performance, low gate charge (Q G) and a high junction temperature (T vjop) of 175°C.
Availability
The AIKQ120N75CP2 and the AIKQ200N75CP2 are now available. More information is available at AIKQ120N75CP2 and AIKQ200N75CP2.
More information about Infineon's contribution to energy efficiency: www.infineon.com/green-energy.
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Information Number
INFATV202203-060
Press Photos
The rated currents of Infineon's discrete EDT2 IGBTs are 120 A and 200 A at 100°C, each with a very low forward voltage, reducing conduction losses by up to 13 percent compared to the previous generation. With a rated current of 200 A, the AIKQ200N75CP2 is also the best-in-class discrete IGBT in a TO247Plus package. Thus, for a defined target power class, fewer devices are needed in parallel. Additionally, power density increases and system costs decrease.
EDT2_IGBT_750_V_TO247
JPG | 537 kb | 2126 x 2728 px
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Infineon Technologies AG published this content on 03 March 2022 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 03 March 2022 08:59:06 UTC.
Infineon Technologies AG is one of the world's leading manufacturers of semiconductors. The group's products include power semiconductors, sensors, microcontrollers, digital, mixed-signal and analog ICs, discrete semiconductor modules, switches, interface ICs, motor-controlling ICs, RF power transistors, voltage regulators, and electronic safety components. Net sales break down by area of activity as follows:
- automotive (50.5%): semiconductor products used in the automotive industry, and memory products for specific applications for automotive, industrial, information technologies, telecommunications and consumer electronics.
- power & sensor systems (23.3%): semiconductors for energy-efficient power supplies, mobile devices, mobile phone network infrastructures, human-machine interaction as well as applications with special demands on their robustness and reliability.
- industrial power control (13.5%): semiconductor products for the conversion of electrical energy for small, medium and high-power applications, used in the manufacturing, the low-loss transmission, the storage and the efficient use of electrical energy;
- connected secure systems (12.6%): semiconductors for networked devices, card-based applications, and government documents; microcontrollers for industrial, entertainment, and household applications, components for connectivity systems, various customer support systems;
- other (0.1%).
Net sales are distributed geographically as follows: Germany (12.4%), Europe/Middle East/Africa (14.4%), China/Hong Kong/Taiwan (32.3%), Japan (10.5%), Asia/Pacific (15.9%), the United States (12.1%) and Americas (2.4%).