RENESAS ELECTRONICS CORPORATION PRODUCTION STRATEGY
STRENGTHEN PRODUCTION RESILIENCE
SEPTEMBER 29, 2021
MASAHIKO NOZAKI
EXECUTIVE VICE PRESIDENT
PRODUCTION & TECHNOLOGY UNIT
RENESAS ELECTRONICS CORPORATION
© 2021 Renesas Electronics Corporation. All rights reserved.
PRODUCTION STRATEGY (1)
- Keep fab-light strategy
- Focus area: Analog, PMOS (IGBT) and High-end/Low-end MCU
- Inhouse fab : Process conversion to focus devices
- Outsource : Increase Renesas share by strengthening partnership
Inhouse front-end fab footprint
Fab | Existing main products | Focus devices | |
Naka N3 | MCU, SOC | IGBT, Analog (incl. Dialog device) | |
High-End MCU | |||
Naka N3/N2 | Naka N2 | MCU, PMOS | PMOS, IGBT |
Saijo | MCU, Analog, IGBT | Low-end MCU | |
Palm Bay | |||
PMOS (IGBT & Switching devices ) | |||
Takasaki | Kawashiri | MCU | Low-End MCU (incl. Dialog device) |
Saijo | Takasaki | PMOS, Analog | IGBT |
Kawashiri | Palm Bay | High-Rel. Products | High-Rel. Products |
© 2021 Renesas Electronics Corporation. All rights reserved. | 2 |
PRODUCTION STRATEGY (2)
Inhouse back-end fab footprint
RSB (Beijing)
Yonezawa
RSC (Suzhou) | Nishiki |
RSM (Penang) | Oita |
REPG (Penang)
RSKL (Kuala Lumpur)
Fab | Existing main products | Focus devices |
Yonezawa | Auto High-End MCU (BGA) | High-End MCU |
Oita | SoC (FCBGA) | SoC/R-Car |
Nishiki | Auto High-End MCU (LQFP) | High-End MCU |
RSC | Auto High-End MCU (LQFP) | High-End MCU |
RSB | Non-AutoLow-End MCU (LQFP) | Low-End MCU (non-Auto) |
RSKL | Auto Low-End MCU (LQFP) | Low-End MCU (Auto) |
RSM | Auto PMOS, Analog | Analog |
REPG | Non-Auto Analog, SoC (only test) | Analog |
© 2021 Renesas Electronics Corporation. All rights reserved. | 3 |
INHOUSE PRODUCTION CAPACITY EXPANSION(1)
Front-End | |||||||||
Low-End MCU / MF4+MF3 | |||||||||
High-End MCU / RV40F+RV28F | |||||||||
Increase Renesas share in OS | Inv. items: Diff. Furnace*1, CVD*2, Coater/Dev.*3 etc. | ||||||||
60 | 60 | ||||||||
40 | 40 | ||||||||
20 | 20 | ||||||||
0 | 0 | ||||||||
2021 | 2022 | 2023 | 2021 | 2022 | 2023 |
Unit: K wafer (Φ8 basis) /month
Outsource
Inhouse Φ8
Inhouse Φ12
IGBT
Inv. items: Grinding, RTP*4, PVD*5, Diff.Furnace, etc.
60
40
20
0
2021 2022 2023
Analog+ Power / BCD + PMOS
Inv. items: Epi. Growth*6, CVD, Diff. Furnace, etc.
60
40
20
0
2021 2022 2023
*1:Diffusion Furnace *2:Chemical Vapor Deposition , *3: Coater Developer , *4 Rapid Thermal Processing *5 Physical Vapor Deposition, *6 Epitaxial Cristal Growth Furnace
© 2021 Renesas Electronics Corporation. All rights reserved. | 4 |
INHOUSE PRODUCTION CAPACITY EXPANSION(2)
High-End MCU / RH850
Inv. Items: est Wire bond, Die bond, Mold mc, etc.
100
80
60
40
20
0
2021 2022 2023
SoC / R-Car
Inv. Items: Surface Mount, Tester, etc.
10
8
6
4
2
0
2021 2022 2023
Back-End
Low-End MCU / RL78+RA
Inv. Items: Wire bond, Die bond, Mold mc, etc.
200
150
100
50
0
2021 2022 2023
Analog
Inv. Items: Tester, Wire bond, Die bond, etc.
20
15
10
5
0
2021 2022 2023
Unit: M pcs/month
Outsource Inhouse
© 2021 Renesas Electronics Corporation. All rights reserved. | 5 |
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Renesas Electronics Corporation published this content on 28 September 2021 and is solely responsible for the information contained therein. Distributed by Public, unedited and unaltered, on 29 September 2021 00:01:23 UTC.
