The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and Soitec (Euronext Paris) have announced a research collaboration to develop next-generation silicon carbide (SiC) semiconductor devices to power electric vehicles and advanced high-voltage electronic devices. Under the collaboration, the parties will leverage Soitec's proprietary technologies such as Smart Cut™ and IME's pilot production line to create 200 mm diameter SiC semiconductors substrates. The joint research will contribute towards developing a holistic SiC ecosystem and boosts semiconductor manufacturing capabilities in Singapore and the region.

The research collaboration is planned to run until mid-2024, and aims to achieve the following outcomes: Develop SiC epitaxy and metal–oxide–semiconductor field-effect transistor (MOSFET) fabrication processes for Smart Cut™ SiC substrates to produce higher quality microchip transistors with less defects and enhanced yield during the manufacturing process. Establish a benchmark for SiC power MOSFET devices fabricated on Smart Cut™ SiC substrates and demonstrate the advantages of the process with conventional bulk substrates. A*STAR's IME has capabilities in Heterogeneous Integration, System-in-Package, Sensor, Actuators and Microsystems, RF & mmWave, SiC/GaN-on-SiC Power Electronics, and MedTech.

The 8-inch SiC pilot line it is establishing aims to validate 8-inch manufacturing processes and tools on a pilot line scale before a transition can be made to 8-inch high-volume manufacturing. A dual purpose of this programme is to perform applied R&D on innovative SiC MOSFET processes and materials like Soitec's Smart Cut™ SiC substrates to pre-position the industry for next-generation SiC manufacturing.