Weebit Nano Limited have demonstrated production-level parameters of Weebit’s Resistive Random-Access Memory (ReRAM) technology in a 28 nanometre (nm) process. Demonstrating production level parameters of Weebit’s ReRAM technology at 28nm is a key step toward productization of embedded Non-Volatile Memory (NVM) for applications such as AI, autonomous driving, 5G, and advanced Internet-of-Things (IoT) processors. Weebit and CEA-Leti, the French research institute recognized as a global leader in the field of microelectronics, jointly tested, characterized and measured functional 1 Megabit (Mb) ReRAM arrays in a 28nm process technology on 300 millimetre (mm) wafers, the largest diameter used in mass production and the standard in advanced nodes. The 28nm ReRAM arrays are implemented using a small and power-efficient switching device, taking full advantage of the low power and low voltage capabilities of the 28nm process, and enabling an up to 4 times increase in memory density. Testing of Weebit’s one-transistor-one-resistor (1T1R) ReRAM arrays, embedded in 28nm Fully Depleted Silicon on Insulator (FDSOI), proved its robustness with very good endurance and data retention alongside other production-level quality parameters. This successful demonstration of reliability and robustness at 28nm strongly positions Weebit’s ReRAM technology to be a key memory technology in NVM for advanced processes where it is no longer technically or economically feasible to embed flash memory technology.