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MarketScreener Homepage  >  Equities  >  Nasdaq  >  MACOM Technology Solutions Holdings Inc    MTSI

MACOM TECHNOLOGY SOLUTIONS HOLDINGS INC

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“Heterolithic Microwave Integrated Circuits Including Gallium-Nitride Devices Formed On Highly Doped Semiconductor” in Patent Application Approval Process (USPTO 20190229115): MACOM Technology Solutions Holdings Inc.

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08/14/2019 | 05:58pm EDT

2019 AUG 14 (NewsRx) -- By a News Reporter-Staff News Editor at Technology Business Daily -- A patent application by the inventors Boles, Timothy E. (Tyngsboro, MA); Struble, Wayne Mack (Franklin, MA), filed on January 19, 2018, was made available online on July 25, 2019, according to news reporting originating from Washington, D.C., by NewsRx correspondents.

This patent application is assigned to MACOM Technology Solutions Holdings Inc. (Lowell, Massachusetts, United States).

The following quote was obtained by the news editors from the background information supplied by the inventors: “Technical Field

“The technology relates to high-speed, heterolithic microwave integrated circuits that include integrated devices formed from silicon, integrated devices formed from gallium nitride, integrated circuit elements, and regions of bulk electrically-insulating material.

“Discussion of the Related Art

“High-speed and power amplifier circuits have a variety of useful applications, such as radio-frequency (RF) communications, radar, RF power, and microwave applications. Such circuits may include diodes and power transistors formed from semiconductor materials and a number of other circuit components, such as capacitors, inductors, resistors, microstrip lines, and interconnects. Gallium nitride semiconductor material has received appreciable attention in recent years because of its desirable electronic and electro-optical properties. GaN has a wide, direct bandgap of about 3.4 eV that corresponds to the blue wavelength region of the visible spectrum. Because of its wide bandgap, GaN is more resistant to avalanche breakdown and can maintain electrical performance at higher temperatures than other semiconductors, such as silicon. GaN also has a higher carrier saturation velocity compared to silicon. Additionally, GaN has a Wurtzite crystal structure, is a very stable and hard material, has a high thermal conductivity, and has a much higher melting point than other conventional semiconductors such as silicon, germanium, and gallium arsenide. Accordingly, GaN can be used to make transistors and diodes for high-speed, high-voltage, and high-power applications.”

In addition to the background information obtained for this patent application, NewsRx journalists also obtained the inventors’ summary information for this patent application: “Structures and methods associated with high-speed, heterolithic microwave integrated circuits (HMICs) are described. AN HMIC of the present embodiments can comprise a substrate having regions of different semiconductor materials and regions of electrically-insulating dielectric material that extend through the substrate. The regions of different semiconductor materials can include different integrated devices formed from the different semiconductor materials having different base elemental compositions (e.g., silicon and III-nitride). Conductive interconnects and passive devices (e.g., capacitors and inductors) can be formed over regions of the electrically-insulating material that exhibits lower loss to radio-frequency waves than semiconductor material. Inclusion of the electrically-insulating dielectric material in an HMIC can improve electrical performance (e.g., higher Q values for resonators) of the microwave integrated circuits.

“Some embodiments relate to an integrated circuit comprising a first region of a substrate containing a first integrated device formed from a first semiconductor material; a second region of the substrate containing a second integrated device formed from a second semiconductor material of a different base elemental composition than the first semiconductor material; and a third region of the substrate containing an electrically-insulating dielectric material that extends through the substrate, wherein the third region of the substrate is located between the first region and the second region.

“Some embodiments relate to a method of making a heterolithic microwave integrated circuit, the method comprising forming a first semiconductor device from a first semiconductor material in a first region of a wafer; forming a second semiconductor material on the first semiconductor material in a second region of the wafer, the second semiconductor material having a different base elemental composition than the first semiconductor material; forming a second semiconductor device from the second semiconductor material; etching a cavity in a third region of the wafer; filling the cavity with an electrically-insulating material; planarizing the electrically-insulating material; and removing a portion of a backside of the wafer to form a substrate, wherein the electrically-insulating material extends through the substrate.

“The foregoing apparatus and method embodiments may be implemented with any suitable combination of aspects, features, and acts described above or in further detail below. These and other aspects, embodiments, and features of the present teachings can be more fully understood from the following description in conjunction with the accompanying drawings.”

The claims supplied by the inventors are:

“1. An integrated circuit comprising: a first region of a substrate containing a first integrated device formed from a first semiconductor material; a second region of the substrate containing a second integrated device formed from a second semiconductor material of a different base elemental composition than the first semiconductor material, wherein the second semiconductor material is formed on the first semiconductor material located in the second region and the first semiconductor material located in the second region has a dopant density of at least 5.times.10.sup.18 cm.sup.-3; and a third region of the substrate containing an electrically-insulating dielectric material that extends through the substrate, wherein the third region of the substrate is located between the first region and the second region.

“2. The integrated circuit of claim 1, wherein the first semiconductor material has a base elemental composition of silicon.

“3. The integrated circuit of claim 2, wherein the first integrated device comprises a semiconductor diode.

“4. The integrated circuit of claim 2, wherein the first integrated device comprises a p-i-n or n-i-p semiconductor diode.

“5. The integrated circuit of claim 1, wherein the second semiconductor material includes a base elemental composition of gallium-nitride material.

“6. The integrated circuit of claim 1, wherein the second semiconductor material includes a base elemental composition of gallium-nitride (GaN).

“7. The integrated circuit of claim 6, wherein the second integrated device comprises a transistor.

“8. The integrated circuit of claim 6, wherein the second integrated device comprises a high-electron-mobility transistor.

“9. The integrated circuit of claim 1, further comprising at least one conductive interconnect formed over the third region.

“10. The integrated circuit of claim 1, further comprising at least a portion of one passive circuit element formed over the third region.

“11. The integrated circuit of claim 10, wherein the passive circuit element is an inductor.

“12. The integrated circuit of claim 1, further comprising: a ground plane formed on a back side of the substrate below the first region, second region, and third region; and a passivation layer formed over the first region, second region, and third region.

“13. The integrated circuit of claim 1, wherein a thickness of the substrate is between 50 microns and 200 microns.

“14. A method of making a heterolithic microwave integrated circuit, the method comprising: forming a first semiconductor device from a first semiconductor material in a first region of a wafer; forming a second semiconductor material on the first semiconductor material in a second region of the wafer, wherein the second semiconductor material has a different base elemental composition than the first semiconductor material and the first semiconductor material is highly doped; forming a second semiconductor device from the second semiconductor material; etching a cavity in a third region of the wafer; filling the cavity with an electrically-insulating material; planarizing the electrically-insulating material; and removing a portion of a backside of the wafer to form a substrate, wherein the electrically-insulating material extends through the substrate.

“15. The method of claim 14, wherein forming the first semiconductor device comprises forming a semiconductor diode and wherein the first semiconductor material has a base elemental composition of silicon.

“16. The method of claim 15, wherein forming the second semiconductor device comprises forming a transistor and wherein the second semiconductor material has a base elemental composition of gallium-nitride material.

“17. The method of claim 14, wherein forming the second semiconductor material comprises epitaxially growing the second semiconductor material on the first semiconductor material in the second region of the wafer.

“18. The method of claim 14, further comprising covering the second semiconductor material with a protective layer before filling the cavity.

“19. The method of claim 14, wherein filling the cavity comprises forcing into the cavity under pressure the electrically-insulating material that is heated above its glass transition temperature.

“20. The method of claim 14, wherein removing a portion of the backside of the wafer comprises removing regions at a bottom of the cavity that are not filled with the electrically-insulating material and planarizing a backside of the substrate.

“21. The method of claim 14, further comprising forming a conductive interconnect over the electrically-insulating material in the third region.

“22. The method of claim 14, further comprising forming at least a portion of a passive device over the electrically-insulating material in the third region.”

URL and more information on this patent application, see: Boles, Timothy E.; Struble, Wayne Mack. Heterolithic Microwave Integrated Circuits Including Gallium-Nitride Devices Formed On Highly Doped Semiconductor. Filed January 19, 2018 and posted July 25, 2019. Patent URL: http://appft.uspto.gov/netacgi/nph-Parser?Sect1=PTO1&Sect2=HITOFF&d=PG01&p=1&u=%2Fnetahtml%2FPTO%2Fsrchnum.html&r=1&f=G&l=50&s1=%2220190229115%22.PGNR.&OS=DN/20190229115&RS=DN/20190229115

(Our reports deliver fact-based news of research and discoveries from around the world.)

Copyright © 2019 NewsRx LLC, Technology Business Daily, source Technology Newsletters

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Financials (USD)
Sales 2019 492 M
EBIT 2019 1,48 M
Net income 2019 -424 M
Debt 2019 606 M
Yield 2019 -
P/E ratio 2019 -3,12x
P/E ratio 2020 -6,39x
EV / Sales2019 3,91x
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Average target price 18,96  $
Last Close Price 19,94  $
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