Samsung's eighth-generation V-NAND features both the industry's highest storage capacity and highest bit density to enable expanded storage space in next-generation servers.
'As market demand for denser, greater-capacity storage pushes for higher V-NAND layer counts, Samsung has adopted its advanced 3D scaling technology to reduce surface area and height, while avoiding the cell-to-cell interference that normally occurs with scaling down,' said SungHoi Hur, Executive Vice President of Flash Product & Technology at
Samsung was able to attain the industry's highest bit density by significantly enhancing the bit productivity per wafer. Based on the Toggle DDR 5.0 interface* - the latest NAND flash standard - Samsung's eighth-generation V-NAND features an input and output (I/O) speed of up to 2.4 gigabits per second (Gbps), a 1.2X boost over the previous generation. This will enable the new V-NAND to accommodate the performance requirements of PCIe 4.0, and later, PCIe 5.0.
The eighth-generation V-NAND is expected to serve as the cornerstone for storage configurations that help expand the storage capacity in next-generation enterprise servers, while extending its use into the automotive market where reliability is especially critical.
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