Infineon Technologies AG announced a collaboration with Worksport Ltd. Worksport will use Infineon?s GaN power semiconductors GS-065-060-5-B-A in the converters for its portable power stations to increase efficiency and power density. Enabled by Infineon?s GaN transistors, the power converters will be lighter and smaller in size with reduced system costs. In addition, Infineon will support Worksport in the optimization of circuits and layout design to further reduce size and increase power density.

Infineon?s GS-065-060-5-B-A is an Automotive-grade 650 V enhancement mode GaN-on-Silicon power transistor. It offers very low junction-to-case thermal resistance for demanding high power applications such as on-board chargers, industrial motor drives and solar inverters. Furthermore, it features simple gate drive requirements (0 V to 6 V) and a transient tolerant gate drive (-20 /+10 V).