Keysight Technologies, Inc. and National Central University Optical Sciences Center (NCUOSC) announced a collaboration to improve the design and test validation efficiency of gallium nitride (GaN) and silicon carbide (SiC) applications, accelerating the pace of 5G and electric vehicle (EV) innovation. Wide band gap (WBG) materials, such as GaN and SiC, offer rapid switching speeds, low loss and withstand high temperature and voltage characteristics. As a result, these materials are leveraged in consumer power products, fast charging, electric vehicles and rail transit, as well as 5G infrastructures and data center servers. However, these advantages increase the complexity of design and testing. NCUOSC successfully used Keysight's PD1500A Dynamic Power Device Analyzer/Double Pulse Tester (DPT) platform to establish a third generation WBG semiconductor open laboratory to improve developing and testing efficiency. As the JEDEC, a global leader in developing open standards and publications for the microelectronics industry, continues to define the dynamic testing of WBG devices, standardized tests are starting to emerge. The Keysight PD1500A DPT determines the key performance parameters, which match all standards, such as turn-on/off and switching characteristics, dynamic on-resistance, dynamic current and voltage, as well as reverse recovery, gate charge and device output characteristics.