Mount Burgess Mining N.L. announced Nxuu Deposit Mineralisation thickness expanded due to the contribution of Vanadium Pentoxide, Germanium and Gallium. V2O5, Ge and Ga mineralised intersections, averaging 13.9m per hole, add 88% to the average 15.8m mineralised intersections of Zn, Pb and Ag. In order to clarify the potential contribution V2O5, Ge and Ga could add to the Zn/Pb/Ag mineralised domains of the Nxuu Deposit, Mount Burgess Mining NL has compiled further data for review.

This is based entirely on 43 drill holes assayed for V2O5, which include 40 drill holes assayed for Ge/Ga. A Mineral Resource Estimate based on 70 drill holes, was released to the market on 3 November 2022. All 70 drill holes were assayed for Zn, Pb and Ag.

Only 43 holes were assayed for V2O5 and only 40 holes were assayed for Ge and Ga. The shallow basin shaped Nxuu Deposit contains a mineralised quartz wacke embedded in a barren dolostone basin. Within the average 42.7m, the 43 drill holes have an average per drill hole of: 7.0m (16.3% of drill hole lengths) of Kalahari sand cover; 4.9m, (11.7% of drill hole lengths) down to 11.9m of barren or below low-cut grade quartz wacke, situated above any mineralization; 12.1m, (28.2% of drill hole lengths) down to 24.0m of V2O5/Ge/Ga mineralisation, situated above any Zn/Pb/Ag mineralization; 15.8m, (37.5% of drill hole lengths) down to 39.8m of Zn/Pb/Ag/V2O5/Ge/Ga mineralization; 1.8m, (3.9% of drill hole lengths) down to 41.6m of V2O5/Ge/Ga mineralisation, situated below any Zn/Pb/Ag mineralization; 1.1m, (2.4% of drill hole lengths) down to 42.7m of barren or below low-cut grade quartz wacke, in contact with the barren dolostone basement.

V2O5 is a key component for a clean energy future and future energy storage requirements. Given a recent push to replace petrol and diesel with electric power, V2O5 has an exceptionally important part in power storage requirements. Vanadium redox flow (VRF) batteries manufactured to incorporate V2O5, can store huge amounts of power, generated from wind and solar, for long periods of time.

VRF batteries can be subject to radical changes in power storage levels within short spaces of time with little impact on battery deterioration. Power storage in Li-ion batteries must be maintained at constant levels to avoid battery deterioration. Germanium is used in fibre optics, infra-red optics, high brightness LEDs used in automobile head lights and in semi-conductors for transistors in thousands of electronic applications.

Recently declared as a strategic metal by the US Government, it is also used for night vision and targeting at night. Germanium is now the most efficient energy generator in solar panels which can convert more than 40% of sunlight into electricity. Silicon base solar cells have a maximum capacity of 20%.

Gallium, a soft metallic element, is currently used for semi-conductors, blue ray technology, light emitting diodes (LEDs), pressure sensors for touch switches, as an additive to produce low melting-point alloys and in mobile phones. The recent upgrade of cellular networks to 5th generation (5G) has created high volumes of international data transmission. These increased volumes generate extremely high temperatures which can be effectively controlled through the use of Gallium computer chips that are more efficient at higher temperatures than traditional silicon-based chips.

The Fraunhofer Institute System and Innovation Research, expects that by 2030, the worldwide demand for Gallium will be six times higher than the current production rate of around 720 tonnes per annum. Recently an international team of scientists led by Professor Konrosh Kalantar-Zadeh at the University of New South Wales, School of Chemical Engineering in Australia, has developed a reactor that uses Gallium and nano-sized silver rods to break down CO2 into constituent elements.