BAE Systems has signed a cooperative agreement with the Air Force Research Laboratory (AFRL) for Phase 1 of a technical effort to transition gallium nitride (GaN) semiconductor technology developed by the U.S. Air Force to our Advanced Microwave Products (AMP) Center.
'Millimeter-wave GaN technologies today are produced in research and development laboratories in low volumes at high associated costs or in captive foundries that are not broadly accessible to defense suppliers,' said Scott Sweetland, Advanced Microwave Products director at BAE Systems. 'This effort will leverage AFRL's high-performance technology and BAE Systems' 6-inch manufacturing capability to advance the state of the art in GaN MMIC performance, reliability, and affordability while providing broader access to this critical technology.'
The work on this project will primarily take place in our 70,000-square-foot Microelectronics Center (MEC) in Nashua, New Hampshire, where we research, develop, and produce compound semiconductor materials, devices, circuits, and modules for a wide range of microwave and millimeter-wave applications. The MEC has been an accredited DoD Category 1A Trusted Supplier since 2008, and fabricates integrated circuits in production quantities for critical DoD programs.
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BAE Systems plc published this content on 17 September 2018 and is solely responsible for the information contained herein. Distributed by Public, unedited and unaltered, on 17 September 2018 16:12:02 UTC