Aehr Test Systems announced it has released two new enhancements for its FOX-P family of wafer level test and burn-in systems. These include the FOX(TM) Bipolar Voltage Channel Module (BVCM) and Very High Voltage Channel Module (VHVCM) options which enable new advanced test and burn-in capabilities for silicon-carbide and gallium-nitride power semiconductors on Aehr's FOX-P wafer-level test and burn-in systems. Silicon Carbide power devices and modules are being widely adopted in the drive train used in electric vehicles as well as onboard and offboard electric vehicle chargers. Gallium Nitride based semiconductors are at the early stages of their application usage, but are expected to grow significantly in their use in a wide range of power conversion applications including photovoltaic, industrial, and other electrification infrastructure applications. The new advanced wafer level test and burn-in capabilities enabled with the addition of the FOX-P BVCM and VHVCM options allow silicon carbide and gallium nitride semiconductor manufacturers more flexibility to address a wider variety of stress and burn-in conditions to address their engineering qualification and production needs in FOX-P multi-wafer test and burn-in systems. These options are available with new system shipments or for upgrades of previously shipped FOX-P systems with first shipments planned with typical 12 - 16 week lead times.

The Bipolar Voltage Channel Module (BVCM), provides customers a wide range of bipolar voltage programmability from positive 40 volts to negative 30 volts applied to the gate for positive High Temperature Gate Bias (HTGB) or Negative HTGB testing. The BVCM can supply gate bias voltage to more than 3,000 die per wafer while capable of monitoring individual die performance. The BVCM, in combination with Aehr's proprietary WaferPak full-wafer Contactors, deliver a unique capability benefitting power silicon carbide diodes and MOSFETs and both E-mode and D-mode gallium nitride power MOSFET manufacturers.

Enabling these tests are particularly essential in threshold voltage (V(TH)) and gate oxide stabilization and screening. The Very High Voltage Channel Module (VHVCM) enables customers to perform High Temperature Reverse Bias (HTRB) testing on wafers at up to 2,000 volts on MOSFETs and diodes and measure individual device leakage current. Aehr's proprietary WaferPak(TM) Contactor implements arcing mitigation technology to alleviate high voltage arcing on the wafer, especially with fine pitch die-to-die geometries.

A full wafer HTRB stress test on silicon carbide or gallium nitride technology can be applied up to 2,000 volts in a single touchdown. The modularity of the FOX-P system offers customers the ability to configure solutions to provide advanced test capabilities for their power electronic device wafers. These advanced capabilities enable manufacturers to ship product with higher reliability and parametric stability necessitated by electric vehicle's traction inverters and on-board chargers.

Test and burn-in at wafer level ensures better control of yield loss and improved product reliability.