AIXTRON SE announced that it will ship a new AIXTRON Close Coupled Showerhead (CCS) deposition system to the University of Texas at Austin, Microelectronics Center (MRC), Department of Electrical and Computer Engineering. The MOCVD deposition tool is specially configured to provide dual material capability, namely gallium oxide (Ga2O3) as well as Gallium-Nitride (GaN)-based materials. Both materials qualify as wide and ultrawide band gap materials - gallium oxide and its alloys can operate at higher voltages, frequencies and temperatures than the incumbent semiconductor materials.

These properties open up new applications within the areas of photodiodes and power switches. The AIXTRON MOCVD system can easily be switched from Gallium oxide to Gallium Nitride modes enabling a safe, flawless operation of the system. At the heart of the MOCVD tool is an advanced triple plenum showerhead, allowing that the oxidizing materials are kept completely separate from the metal organic and gas precursors until injection into the process chamber.

The system is assuring a high degree of thermal uniformity through the ARGUS full temperature mapping across the susceptor and it is perfectly sized for high-end research and development - in academic institutions as well as in innovative private enterprises.