Navitas Semiconductor announced that Xiaomi has launched their third GaNFast™ charger, a 65W dual-output fast charger. The '65W 1A1C' has a USB-C output up to 65W to power laptops and fast-charge smartphones via USB-PD 3.0, QC and PPS fast-charging protocols, with an extra USB-A output up to 18W to conveniently - and simultaneously - charge another phone or accessory such as headphones. The new GaN charger can power the Xiaomi Mi11 from 0% to 100% charge in only 45 minutes. Due to high-speed GaN power ICs, the charger achieves a world-class small size of only 69 cc with folding AC-pins – a 30% reduction vs Xiaomi's previous silicon-based designs - and a world-leading featherweight 104 g for ultimate portability. This top performance charger is available now from Xiaomi for a retail price of only 149 RMB. Gallium nitride (GaN) is a next-generation semiconductor technology that runs up to 20x faster than legacy silicon chips. Navitas' proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. These 'GaNFast' power ICs become easy-to-use, high-speed, high-performance 'digital-in, power-out' building blocks and deliver up to 3x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions. An estimated $13.1B electrification opportunity includes mobile fast chargers and adapters, data centers, solar energy, and EV.